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V23990-P629-L63-PM flow boost 0 1200v/50a high efficiency dual boost ultra fast switching frequency low inductance layout 1200v igbt and 1200v sic diode antiparallel igbt protection diode with high current solar inverter v23990-p629-l63 tj=25c, unless otherwise specified parameter symbol value unit v rrm 1600 v t h =80c 38 t c =80c 45 t h = 80c 47 t c = 80c 71 t j m ax 150 c t1,t2 collector-emitter break down voltage v ces 1200 v t h =80c 43 t c =80c 57 t h = 80c 14 5 t c =80c 2 20 gate- emitter peak voltage v ge 20 v t sc t j 150c 10 s v cc v ge = 1 5v 600 v maxim um junction temperature t j max 175 c a t j =t j max w i 2 t i f sm a 2 s 200 t j =25 c t p = 10ms 220 a features flow 0 12mm housing target applications schematic condition d7-d10 typ e s maximum ratings t p limited by t j max w pulsed co llector current power dissipation per igbt a i c t j =t j max t j =t j max a 160 repet itive peak reverse voltage maximum junction temperature t j =t j max p tot forward average current surge f orward current power dissipation per diode i2t-value i fav short circuit ratings p tot i cpulse dc collector current copyright vincotech 1 revision: 1
V23990-P629-L63-PM tj=25c, unless otherwise specified parameter symbol value unit condition maximum ratings d1,d2,d3,d4,d5,d6 * t h =80c 28 t c =80c 34 t h = 80c 81 t c = 80c 12 3 thermal properties insulation properties t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm t j =t j max a a 2 s a t p limited by t j max 1200 pow e r dissipation per diode i frm p tot v rrm repetitive peak forward current peak re petitive reverse voltage forward average current i fav t j max t p =10ms 175 w t j =t j max ma ximum junction temperature -40+(tjmax - 25) c storage temperature t stg -40+125 c i 2 t a clearan ce insulation voltage creepage distance t op operation temperature under switching condition c v t j =25c 9 5 1 38 i fsm 78 s u rge f orward current i2t-value copyright vincotech 2 revision: 1
V23990-P629-L63-PM parameter symbol un it v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 0,8 1,14 1,9 tj=125c 1,10 tj=25c 0,92 tj=125c 0,80 tj=25c 0,009 tj=125c 0,012 tj=25c 0,05 tj=125c thermal resistance chip to heatsink per chip r thjh phase-change material 1,49 k/w thermal resistance chip to heatsink per chip r thjh thermal grease tickness 50um = 1 w/k 1,73 k/w tj=25c 3,5 5,5 7,5 tj=125c tj=25c 1,5 3,16 2,5 tj=125c 3,42 tj=25c 1 tj=125c tj=25c 250 250 tj=125c tj=25c 24 tj=125c 23 tj=25c 9 tj=125c 11 tj=25c 178 tj=125c 208 tj=25c 11 tj=125c 39 tj=25c 0,467 tj=125c 0,550 tj=25c 0,934 tj=125c 1,760 thermal resistance chip to heatsink per chip r thjh phase-change material 0,65 k/w thermal resistance chip to heatsink per chip r thjh thermal grease tickness 50um = 1 w/k 0,43 k/w tj= 25c 1,43 2 tj=125c 1,69 tj=25c 150 tj=125c tj=25c 17 tj=125c 15 tj=25c 9 tj=125c 9 tj=25c 0,24 tj=125c 0,21 tj=25c 0,093 tj=125c 0,074 di(rec)max tj=25c 6570 /dt tj=125c 5559 thermal resistance chip to heatsink per chip r thjh phase-change material 1,17 k/w thermal resistance chip to case per chip r thjh thermal grease tickness 50um = 1 w/k 1,36 k/w 40 t j=25c 1200 15 15 gate emitter threshold voltage collector-emitter saturation voltage i ges v ge =v ce i ces collector-emitter cut-off v ce(sat) v ge(th) r gint integrated gate resistor gate-emitter leakage current turn-on energy loss per pulse fall time rise time t1,t2 turn-off energy loss per pulse v f f=1mhz c rss c oss q gate e rec turn-off delay time forward voltage input capacitance output capacitance reverse transfer capacitance gate charge reverse current i r characteristic values forward voltage thresho l d voltage (for power loss calc. only) value conditi o ns 25 v to d7-d10 slope resistance (for power loss calc. only) 25 v f v v r t 1500 25 ma 0,00025 50 7 00 40 220 370 700 40 25 600 15 0 20 reverse leakage current d1,d2,d3,d4,d5,d6 * c ies turn-on delay time t f reverse recovery time reverse recovered energy peak recovery current peak rate of fall of recovery current reverse recovery charge 15 15 t d(on) e off t r rgoff=4 rgon=4 e on t d(off) t rr i rrm i rm rgon=4 q rr 4 tj=25c 330 a ns mws pf a a/s na c v ns ma v v nc mws 12 5 1 200 0 0 3200 copyright vincotech 3 revision: 1
V23990-P629-L63-PM parameter symbol un it v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max characteristic values value conditi ons 21511 t=25c t=2 5c mw/k 3,5 +4,5 -4,5 % mw 210 power dissipation constant rated resistance r deviation of r100 power dissipation p thermistor tol. 3% ? r/r r100=1486 vincotech ntc reference b-value b( 25/100) tol. 3% b-value b(25/50) t=25c t=25c t=25c k k f 3884 t=25c 3964 copyright vincotech 4 revision: 1
V23990-P629-L63-PM figure 1 t1, t2 figure 2 t1, t2 typical output characteristics typical out put characteristics i d = f(v ds ) i d = f(v ds ) at at t p = 250 s t p = 25 0 s t j = 25 c t j = 1 26 c v gs from 7 v to 17 v in steps of 1 v v gs from 7 v to 17 v in steps of 1 v figure 3 t1, t2 figure 4 t1, t2 typical transfer characteristics typical di ode forward current as i d = f(v gs ) a function of forward voltage i f = f(v f ) at at t p = 100 s t j = 25 / 1 25 c t p = 250 s t j = 25/ 1 25 c v d s = 10 v t1, t 2 0 10 20 30 40 50 0 1 2 3 4 5 v f (v) i f (a) 0 10 20 30 40 50 0 2 4 6 8 10 v gs (v) i d (a) 0 30 60 90 120 0 1 2 3 4 5 v ce (v) i c (a) 0 30 60 90 120 0 1 2 3 4 5 v ce (v) i c (a) copyright vincotech 5 revision: 1
V23990-P629-L63-PM figure 5 t1, t2 figure 6 t1, t2 typical switching energy losses typical s witching energy losses as a function of collector current as a function of gate resistor e = f(i d ) e = f(r g ) w ith an inductive load at with an inductive load at t j = 25/ 125 c t j = 25/ 125 c v ds = 7 00 v v ds = 700 v v gs = 15 v v gs = 15 v r g on = 4 i d = 4 0 a r goff = 4 fi gure 7 d1, d2, d3, d4, d5, d6 figure 8 d1, d2, d3, d4, d5, d6 typical reverse recovery energy loss typical r everse recovery energy loss as a function of collector (drain) current as a function of gate resistor e rec = f(i c ) e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/ 125 c t j = 25/ 125 c v ds = 7 00 v v ds = 70 0 v v gs = 15 v v gs = 15 v r g on = 4 i d = 4 0 a r goff = 4 t 1, t2 e rec high t e rec low t 0 0,005 0,0 1 0,015 0,02 0,025 0 20 40 60 80 i c (a) e (mws) e rec high t e rec low t 0 0,005 0,0 1 0,015 0,02 0,025 0 4 8 12 16 20 r g ( w ww w ) e (mws) e off high t e on high t e on low t e off low t 0 1 2 3 4 5 0 20 40 60 80 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 1 2 3 4 5 0 4 8 12 16 20 r g ( w ww w ) e (mws) copyright vincotech 6 revision: 1
V23990-P629-L63-PM figure 9 t1, t2 figure 10 t1, t2 typical switching times as a typical s witching times as a function of collector current function of gate resistor t = f(i d ) t = f(r g ) w ith an inductive load at with an inductive load at t j = 125 c t j = 1 25 c v ds = 70 0 v v ds = 700 v v gs = 15 v v gs = 15 v r g on = 4 i c = 4 0 a r goff = 4 fi gure 11 d1 , d2, d3, d4, d5, d6 figure 12 d1, d2, d3, d4, d5, d6 typical reverse recovery time as a typical r everse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/ 1 25 c t j = 2 5/ 125 c v ce = 7 00 v v r = 700 v v g e = 15 v i f = 40 a r gon = 4 v gs = 15 v t1, t 2 t doff t don t r 0,001 0,01 0,1 1 0 2 0 4 0 60 80 i d (a) t ( m s) t f t doff t f t don t r 0,001 0,01 0,1 1 0 4 8 1 2 1 6 20 r g ( ) t ( m s) t rr high t t rr low t 0 0,002 0, 0 04 0,006 0,008 0,01 0,012 0,014 0 4 8 12 16 20 r gon ( ) t rr ( m s) t rr high t t rr low t 0 0,002 0, 0 04 0,006 0,008 0,01 0,012 0,014 0 20 40 60 80 i c (a) t rr ( m s) copyright vincotech 7 revision: 1
V23990-P629-L63-PM figure 13 d1, d2, d3, d4, d5, d6 figure 14 d1, d2, d3, d4, d5, d6 typical reverse recovery charge as a typical r everse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c ) q rr = f(r gon ) at at at t j = 25 / 125 c tj = 25/ 125 c v ce = 700 v v r = 70 0 v v ge = 15 v i f = 40 a r go n = 4 v gs = 15 v figure 15 d1 , d2, d3, d4, d5, d6 figure 16 d1, d2, d3, d4, d5, d6 typical reverse recovery current as a typical r everse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c ) i rrm = f(r gon ) at at t j = 25/ 1 25 c t j = 2 5/ 125 c v ce = 7 00 v v r = 700 v v g e = 15 v i f = 40 a r gon = 4 v gs = 15 v t1, t 2 0 5 10 15 20 25 0 4 8 12 16 20 r gon ( ) i rrm (a) q rr high t q rr low t 0 0,05 0,1 0 , 15 0,2 0 4 8 12 16 20 r gon ( ) q rr ( m c) 0 5 10 15 20 25 0 20 40 60 80 i c (a) i rrm (a) q rr high t q rr low t 0 0,05 0,1 0 , 15 0,2 0 20 40 60 80 i c (a) q rr ( c) copyright vincotech 8 revision: 1
V23990-P629-L63-PM figure 17 d1, d2, d3, d4, d5, d6 figure 18 d1, d2, d3, d4, d5, d6 typical rate of fall of forward typical r ate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,d i r ec /dt = f(r gon ) at at t j = 25/ 1 25 c tj = 25/ 125 c v ce = 700 v v r = 70 0 v v ge = 15 v i f = 40 a r go n = 4 v gs = 15 v figure 19 t1 , t2 figure 20 d1, d2, d3, d4, d5, d6 igbt/mosfet transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) at at d = t p / t d = t p / t r t h jh = 0,65 k/w r t hjh = 0,79 k/w r th jh = 1,17 k/w r t hjh = 1,36 k/w r (c/w) tau (s) r (c/w) tau (s) r (c/w) tau (s) r (c/w) tau (s) 0,173 0,561 0,208 0,561 0,043 9,803 0,050 9,80 0,381 0,125 0,459 0,125 0,101 0,815 0,118 0,82 0,078 0,010 0,094 0,010 0,383 0,098 0,445 0,10 -0,003 0,048 -0,004 0,048 0,308 0,026 0,358 0,03 0,026 0,001 0,032 0,001 0,233 0,005 0,271 0,01 0,098 0,001 0,114 0,00 t1, t2 igbt thermal model values fwd ther mal model values phase-change material thermal grease phase-change material thermal grease phase-change material thermal grease phase-change material thermal grease 0 2000 4000 6000 8000 10000 0 4 8 12 16 20 r gon ( w ) di rec / dt (a/ m s) di 0 /dt di rec /dt t p (s) z thjh (k/w) 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 2000 4000 6000 8000 10000 0 20 40 60 80 i c (a) di rec / dt (a/ m s) di 0 /dt di rec /dt copyright vincotech 9 revision: 1
V23990-P629-L63-PM figure 21 t1, t2 figure 22 t1, t2 power dissipation as a collector/ drain current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) at at t j = 175 o c t j = 1 7 5 oc v gs = 15 v figure 2 3 d1, d2, d3, d4, d5, d6 figure 24 d1, d2, d3, d4, d5, d6 power dissipation as a forward c ur rent as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at at t j = 175 o c t j = 1 7 5 oc t1, t2 0 30 60 90 120 150 180 210 240 270 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 60 70 80 0 50 100 150 200 th ( o c) i c (a) 0 25 50 75 100 125 150 175 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 10 revision: 1
V23990-P629-L63-PM figure 25 t1, t2 figure 26 t1, t2 safe operating area as a function gate volt age vs gate charge of drain-source voltage i d = f(v ds ) v gs = f(qg) at at d = sin gle pulse i d = 50 a t h = 80 o c v g s = 15 v t j = t jmax o c figure 27 t 1 , t2 figure 28 t1, t2 short circuit withstand time as a function of typical short ci rcuit collector current as a function of gate-emitter voltage gate-emitter voltage t sc = f(v ge ) v ge = f(q ge ) at at v ce = 600 v v ce 60 0 v t j 150 o c t j = 25 oc t1, t2 v ds (v) i d (a) 1 10 1 10 0 10 2 10 3 10 3 10 0 10us 100us 1ms 10ms 100ms dc 10 2 10 1 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 qg (nc) u gs (v) 240v 960v 0 2,5 5 7,5 10 12,5 15 17,5 12 13 14 15 16 17 18 19 20 v ge (v) t sc (s) 0 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 12 13 14 15 16 17 18 v ge (v) i c (sc) copyright vincotech 11 revision: 1
V23990-P629-L63-PM figure 29 t1, t2 reverse bias safe operating area i c = f(v ce ) at t vj 150 oc i c m ax = 100 a u ce m ax = 1200 v t1, t2 0 20 40 60 80 100 120 0 200 400 600 800 1000 1200 1400 v ce (v) i c (a) i c max v ce max i c module i c chip copyright vincotech 12 revision: 1
V23990-P629-L63-PM figure 1 d7-d10 figure 2 d7-d10 typical diode forward current as diode trans ient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) at at t j = 25/ 1 25 c d = t p / t t p = 2 50 s r thjh = 1 ,49 k/w r t hjh = 1,73 k/w fi gure 3 d7-d10 figur e 4 d7-d10 power dissipation as a forward cur rent as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at at t j = 150 o c t j = 1 5 0 oc d7- d10 phase-change material thermal grease 0 15 30 45 60 75 0 0,4 0,8 1,2 1,6 2 v f (v) i f (a) t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 20 40 60 80 100 120 0 50 100 150 200 t h ( o c) p tot (w) 0 5 10 15 20 25 30 35 40 45 50 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 13 revision: 1
V23990-P629-L63-PM figure 1 thermistor typical ntc characteristic as a func tion of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 4000 800 0 1 2000 16000 20000 24000 25 50 75 100 125 t (c) r/ copyright vincotech 14 revision: 1
V23990-P629-L63-PM t j 125 c r gon 4 r goff 4 figure 1 t1, t2 figure 2 t1, t2 turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of t don , t eon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = 0 v v ge (0% ) = 0 v v ge (100 %) = 15 v v ge (10 0%) = 15 v v c (100 %) = 700 v v c (10 0%) = 700 v i c (10 0%) = 40 a i c (100 %) = 40 a t doff = 0 ,320 s t do n = 0,027 s t eof f = 0,468 s t eon = 0,157 s figure 3 t1, t2 figure 4 t1, t2 turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 700 v v c (10 0%) = 700 v i c (10 0%) = 40 a i c (100 %) = 40 a t f = 0,05 7 s t r = 0 , 017 s swi tching definitions boost general conditions = = = i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 1 2 5 -0,15 -0,05 0,05 0,15 0,25 0,35 0,45 0,55 time (us) % t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -25 0 25 50 75 100 12 5 150 2,95 3 3,05 3,1 3,15 3,2 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 12 5 0,15 0,2 0,25 0,3 0,35 0,4 0,45 time (us) % v ce i c t f i c 10% i c 90% -25 0 25 50 75 100 12 5 150 2,95 3 3,05 3,1 3,15 time(us) % t r v ce i c copyright vincotech 15 revis i on: 1
V23990-P629-L63-PM figure 5 t1, t2 figure 6 t1, t2 turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 28,02 kw p o n (100%) = 28,02 kw e o ff (100%) = 2,43 mj e on (100%) = 1,22 mj t eo ff = 0,468 s t eon = 0,1567 s figur e 7 t1, t2 turn- of f switching waveforms & definition of t rr v d (100%) = 700 v i d (10 0%) = 40 a i rrm (1 00%) = -15 a t rr = 0, 009 s swi tching definitions boost i c 1% v ge 90% -25 0 25 50 75 100 1 2 5 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 time (us) % p off e off t eoff v ce 3% v ge 10% -25 0 25 50 75 100 1 2 5 2,95 3 3,05 3,1 3,15 3,2 3,25 time(us) % p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -75 -50 -25 0 25 50 7 5 100 125 3,02 3,03 3,04 3,05 3,06 3,07 3,08 time(us) % i d v d fitted copyright vincotech 16 revision: 1
V23990-P629-L63-PM figure 8 d1, d2, d3, d4, d5, d6 figure 9 d1, d2, d3, d4, d5, d6 turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 40 a p rec ( 1 00%) = 28,02 kw q r r (100%) = 0,21 c e rec ( 100%) = 0,07 mj t qr r = 0,02 s t erec = 0,02 s swit ching definitions boost t qrr -50 0 50 100 150 2 0 0 3 3,02 3,04 3,06 3,08 3,1 time(us) % i d q rr -50 0 50 100 150 200 3,03 3,04 3,05 3,06 3,07 time(us) % p rec e rec t erec copyright vincotech 17 revis i on: 1
V23990-P629-L63-PM version ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing v23990-p629-l63 p629l63 p629l63 outline pinout ordering code & marking ordering code and marking - outline - pinout copyright vincotech 18 revision: 1
V23990-P629-L63-PM disclaimer life su pport policy as used herein: 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. copyright vincotech 19 revision: 1

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